Gas effects on the interface state spectrum of MIS devices

A semiautomatic measurement system has been developed for investigating the electronic structure of the interface between an insulator and a semiconductor. The associated microcomputer possesses advanced software which leads to simple operation particularly when used in the real time mode. An attrac...

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Bibliographic Details
Main Author:	Martin, P. J.
Published:	Durham University 1980
Subjects:	660 Chemical engineering
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277525

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spelling	ndltd-bl.uk-oai-ethos.bl.uk-2775252015-03-19T05:41:19ZGas effects on the interface state spectrum of MIS devicesMartin, P. J.1980A semiautomatic measurement system has been developed for investigating the electronic structure of the interface between an insulator and a semiconductor. The associated microcomputer possesses advanced software which leads to simple operation particularly when used in the real time mode. An attractive feature of the technique is that admittance data are evaluated in the voltage domain using a modified version of the Simonne method. The system has been used to investigate the effects of gases on the interface state spectrum of MIS devices; the action of hydrogen upon the palladium-silicon dioxide-silicon system receiving the most attention. An alternative insulator to silicon dioxide has been considered, namely organic Langmuir films. Overall there has been little detectable change in the surface state density, although results with different semiconductors appear to be more encouraging.660Chemical engineeringDurham Universityhttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277525http://etheses.dur.ac.uk/7619/Electronic Thesis or Dissertation
collection	NDLTD
sources	NDLTD
topic	660 Chemical engineering
spellingShingle	660 Chemical engineering Martin, P. J. Gas effects on the interface state spectrum of MIS devices
description	A semiautomatic measurement system has been developed for investigating the electronic structure of the interface between an insulator and a semiconductor. The associated microcomputer possesses advanced software which leads to simple operation particularly when used in the real time mode. An attractive feature of the technique is that admittance data are evaluated in the voltage domain using a modified version of the Simonne method. The system has been used to investigate the effects of gases on the interface state spectrum of MIS devices; the action of hydrogen upon the palladium-silicon dioxide-silicon system receiving the most attention. An alternative insulator to silicon dioxide has been considered, namely organic Langmuir films. Overall there has been little detectable change in the surface state density, although results with different semiconductors appear to be more encouraging.
author	Martin, P. J.
author_facet	Martin, P. J.
author_sort	Martin, P. J.
title	Gas effects on the interface state spectrum of MIS devices
title_short	Gas effects on the interface state spectrum of MIS devices
title_full	Gas effects on the interface state spectrum of MIS devices
title_fullStr	Gas effects on the interface state spectrum of MIS devices
title_full_unstemmed	Gas effects on the interface state spectrum of MIS devices
title_sort	gas effects on the interface state spectrum of mis devices
publisher	Durham University
publishDate	1980
url	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277525
work_keys_str_mv	AT martinpj gaseffectsontheinterfacestatespectrumofmisdevices
_version_	1716742193253711872

Gas effects on the interface state spectrum of MIS devices

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