Simulation and modelling of power devices based on 4H silicon carbide

Simulation and modelling of power devices based on 4H silicon carbide

Bibliographic Details
Main Author:	Adachi, Kazuhiro
Published:	University of Newcastle Upon Tyne 2003
Subjects:	621 Bipolar junction transistor
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.273406

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