Study of silicon damage caused by ultra-low energy boron implantation

Study of silicon damage caused by ultra-low energy boron implantation

Bibliographic Details
Main Author: Zhang, Shenjun
Published: University of Salford 2001
Subjects:
530.41
Solid-state physics
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.271250

Internet

http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.271250

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