Ion bombardment induced damage and annealing in Si

Bibliographic Details
Main Author:	Zeroual, Boudjemaa
Published:	University of Salford 1990
Subjects:	530.41 Semiconductor doping
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.258251

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record_format	oai_dc
spelling	ndltd-bl.uk-oai-ethos.bl.uk-2582512015-03-19T06:37:55ZIon bombardment induced damage and annealing in SiZeroual, Boudjemaa1990530.41Semiconductor dopingUniversity of Salfordhttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.258251Electronic Thesis or Dissertation
collection	NDLTD
sources	NDLTD
topic	530.41 Semiconductor doping
spellingShingle	530.41 Semiconductor doping Zeroual, Boudjemaa Ion bombardment induced damage and annealing in Si
author	Zeroual, Boudjemaa
author_facet	Zeroual, Boudjemaa
author_sort	Zeroual, Boudjemaa
title	Ion bombardment induced damage and annealing in Si
title_short	Ion bombardment induced damage and annealing in Si
title_full	Ion bombardment induced damage and annealing in Si
title_fullStr	Ion bombardment induced damage and annealing in Si
title_full_unstemmed	Ion bombardment induced damage and annealing in Si
title_sort	ion bombardment induced damage and annealing in si
publisher	University of Salford
publishDate	1990
url	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.258251
work_keys_str_mv	AT zeroualboudjemaa ionbombardmentinduceddamageandannealinginsi
_version_	1716750907551514624

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