Electron transport in uniaxially stressed silicon MOSFETs

Bibliographic Details
Main Author:	Paquin, Normand
Published:	University of Cambridge 1988
Subjects:	530.41 Solid-state physics
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.257213

id	ndltd-bl.uk-oai-ethos.bl.uk-257213
record_format	oai_dc
spelling	ndltd-bl.uk-oai-ethos.bl.uk-2572132015-03-19T09:37:34ZElectron transport in uniaxially stressed silicon MOSFETsPaquin, Normand1988530.41Solid-state physicsUniversity of Cambridgehttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.257213Electronic Thesis or Dissertation
collection	NDLTD
sources	NDLTD
topic	530.41 Solid-state physics
spellingShingle	530.41 Solid-state physics Paquin, Normand Electron transport in uniaxially stressed silicon MOSFETs
author	Paquin, Normand
author_facet	Paquin, Normand
author_sort	Paquin, Normand
title	Electron transport in uniaxially stressed silicon MOSFETs
title_short	Electron transport in uniaxially stressed silicon MOSFETs
title_full	Electron transport in uniaxially stressed silicon MOSFETs
title_fullStr	Electron transport in uniaxially stressed silicon MOSFETs
title_full_unstemmed	Electron transport in uniaxially stressed silicon MOSFETs
title_sort	electron transport in uniaxially stressed silicon mosfets
publisher	University of Cambridge
publishDate	1988
url	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.257213
work_keys_str_mv	AT paquinnormand electrontransportinuniaxiallystressedsiliconmosfets
_version_	1716769991447019520

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