Characterization and control of crystallographic defects in thin film SIMOX materials
Crystallographic defects present in the silicon over layer of thin (< 1000 A) SIMOX material have been characterized using a newly developed etchant and by transmission electron microscopy. Rutherford backscattering spectroscopy has also been used to determine the chemical composition and thickne...
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University of Surrey
1994
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240720 |