A study of the optical and electronic properties of amorphous silicon nitride
Amorphous a-SiNx (:H) films have been prepared by radio-frequency sputtering in an argon-nitrogen-hydrogen atmosphere. Both hydrogenated and non-hydrogenated films were studied along with films prepared by the glow-discharge decomposition of a gaseous mixture of silane and ammonia. Photoemission exp...
Main Author: | Piggins, Nicholas |
---|---|
Published: |
University of Leicester
1988
|
Subjects: | |
Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233638 |
Similar Items
-
Preparation and properties of amorphous cadmium-silicon-arsenic thin films
by: Derbyshire, H. S.
Published: (1987) -
Ion beam mixing in amorphous silicon
by: Jafri, Zaeem Hasan
Published: (1990) -
Amorphous silicon for electronic device application
by: Smith, G. J.
Published: (1983) -
The forming process in amorphous silicon memory devices
by: Choi, Wee Kiong
Published: (1986) -
Studies of amorphous oxide films prepared by ion beam sputtering
by: Bellingham, James Robert
Published: (1989)