Modification of the electronic properties of fluorinated epitaxial graphene with an electric bias
Ultraviolet photoemission spectroscopy measurements reveal that there is notable variation of the electron density of states in valence bands near the Fermi level. Evolution of the electronic structure of fluorinated graphene as a function ofthe applied electric bias is investigated. The experimenta...
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| Format: | Others |
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DigitalCommons@Robert W. Woodruff Library, Atlanta University Center
2014
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| Online Access: | http://digitalcommons.auctr.edu/dissertations/1598 http://digitalcommons.auctr.edu/cgi/viewcontent.cgi?article=3139&context=dissertations |
| Summary: | Ultraviolet photoemission spectroscopy measurements reveal that there is notable variation of the electron density of states in valence bands near the Fermi level. Evolution of the electronic structure of fluorinated graphene as a function ofthe applied electric bias is investigated. The experimental results demonstrate that the tailoring of electronic band structure correlates with the interlayer coupling tuned by the applied bias. The change in the work function of fluorinated graphene demonstrates the ability of fluorination to modify electron emissions characteristics of graphene. |
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