Oxygen plasma stripping of photoresist from bipolar integrated circuit wafers - process development

The development of a plasma strip process, in which an oxygen plasma removes photoresist films from etched silicon wafers, is described. The ultimate objective was to demonstrate that dry plasm stripping is a reliable, cost-effective, production-compatible process that does not compromise product re...

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Bibliographic Details
Main Author: Ulanmo, Peter Obiajulu
Format: Others
Published: DigitalCommons@Robert W. Woodruff Library, Atlanta University Center 1981
Subjects:
Online Access:http://digitalcommons.auctr.edu/dissertations/690
http://digitalcommons.auctr.edu/cgi/viewcontent.cgi?article=2228&context=dissertations
Description
Summary:The development of a plasma strip process, in which an oxygen plasma removes photoresist films from etched silicon wafers, is described. The ultimate objective was to demonstrate that dry plasm stripping is a reliable, cost-effective, production-compatible process that does not compromise product reliability. Optimum process parameters were determined to be an RF power level of 450 watts and an oxygen flow rate of 600 cc per minute. Metallized and glass-coated bipolar devices produced with the plasma stripping process have satisfactorily demonstrated production yield equivalency. The end point of plasma stripping was determined quantitatively.