The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits

The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits

abstract: Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external drive circuits to generate pulse width modulated (PWM) signals switching from 0V to approximately 10V. A...

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Bibliographic Details
Other Authors: Summers, Nicholas Burton (Author)
Format: Dissertation
Language:English
Published: 2010
Subjects:
Electrical Engineering
MESFET
SiC
SOI
Online Access:http://hdl.handle.net/2286/R.I.8692

Internet

http://hdl.handle.net/2286/R.I.8692

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