A Full-Band Monte Carlo Transport Simulator for Wide Bandgap Materials in Power Electronics
abstract: 4H-SiC has been widely used in many applications. All of these benefit from its extremely high critical electric field and good electron mobility. For example, 4H-SiC possesses a critical field ten times higher than that of Si, which allows high-voltage blocking layers composed of 4H-SiC t...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2020
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| Online Access: | http://hdl.handle.net/2286/R.I.57163 |