Design and Optimization of Resistive RAM-based Storage and Computing Systems
abstract: The Resistive Random Access Memory (ReRAM) is an emerging non-volatile memory technology because of its attractive attributes, including excellent scalability (< 10 nm), low programming voltage (< 3 V), fast switching speed (< 10 ns), high OFF/ON ratio (> 10), good endurance...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2019
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| Online Access: | http://hdl.handle.net/2286/R.I.53730 |