Characterization of Electrically Active Defects at Nb/Si Interface Using Current Transport and Transient Capacitance Measurements

Characterization of Electrically Active Defects at Nb/Si Interface Using Current Transport and Transient Capacitance Measurements

abstract: In this project, current-voltage (I-V) and Deep Level Transient Spectroscopy (DLTS) measurements are used to (a) characterize the electrical properties of Nb/p-type Si Schottky barriers, (b) identify the concentration and physical character of the electrically active defects present in the...

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Bibliographic Details
Other Authors: Krishna Murthy, Madhu (Author)
Format: Dissertation
Language:English
Published: 2018
Subjects:
Materials Science
Engineering
Defect characterization
DLTS
Nb/Si
Online Access:http://hdl.handle.net/2286/R.I.51636

Internet

http://hdl.handle.net/2286/R.I.51636

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