Growth and Characterization of InGaAsP Alloy Nanowires with Widely Tunable Bandgaps for Optoelectronic Applications
abstract: The larger tolerance to lattice mismatch in growth of semiconductor nanowires (NWs) offers much more flexibility for achieving a wide range of compositions and bandgaps via alloying within a single substrate. The bandgap of III-V InGaAsP alloy NWs can be tuned to cover a wide range of (0.4...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2018
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| Online Access: | http://hdl.handle.net/2286/R.I.49297 |