Monitor-Based In-Field Wearout Mitigation for CMOS RF Integrated Circuits
abstract: Performance failure due to aging is an increasing concern for RF circuits. While most aging studies are focused on the concept of mean-time-to-failure, for analog circuits, aging results in continuous degradation in performance before it causes catastrophic failures. In this regard, the li...
Other Authors: | Chang, Doo Hwang (Author) |
---|---|
Format: | Doctoral Thesis |
Language: | English |
Published: |
2017
|
Subjects: | |
Online Access: | http://hdl.handle.net/2286/R.I.46353 |
Similar Items
-
RF power CMOS
by: Scholvin, Jörg, 1976-
Published: (2014) -
High Performance GHZ RF CMOS IC's for Integrated Phase-Locked Loops
by: Li, Shenggao
Published: (2000) -
Far field RF power extraction circuits and systems
by: Mandal, Soumyajit, 1979-
Published: (2005) -
Performance limits of RF power CMOS
by: Gogineni, Usha, 1975-
Published: (2011) -
RF signal inductors in iUHD for voltage controlled oscillators in configurable RF integrated circuits
by: Karpe, Charvak (Charvak P.)
Published: (2008)