ZnTe Nanostructural Synthesis for Electronic and Optoelectronic Devices
abstract: Zinc telluride (ZnTe) is an attractive II-VI compound semiconductor with a direct bandgap of 2.26 eV that is used in many applications in optoelectronic devices. Compared to the two dimensional (2D) thin-film semiconductors, one-dimensional (1D) nanowires can have different electronic p...
Other Authors: | Peng, Jhih-Hong (Author) |
---|---|
Format: | Doctoral Thesis |
Language: | English |
Published: |
2017
|
Subjects: | |
Online Access: | http://hdl.handle.net/2286/R.I.45593 |
Similar Items
-
Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties
by: Katarzyna Gas, et al.
Published: (2021-09-01) -
Thickness Effect on Some Physical Properties of RF Sputtered ZnTe Thin Films for Potential Photovoltaic Applications
by: Dumitru Manica, et al.
Published: (2021-09-01) -
Material Properties of MBE Grown ZnTe, GaSb and Their Heterostructures for Optoelectronic Device Applications
Published: (2012) -
Preparation of ZnTe thin films using chemical bath deposition technique
by: Iman Ahmed Younus, et al.
Published: (2020-12-01) -
Intermediate Band Studies of Substitutional V<sup>2+</sup>, Cr<sup>2+</sup>, and Mn<sup>2+</sup> Defects in ZnTe Alloys
by: Jen-Chuan Tung, et al.
Published: (2020-12-01)