Determining Carrier Mobilities in GaAs and Natural Pyrite Using Geometrical Magnetoresistance Measurement

• Other Authors: Ravi, Aditya (Author)
• Format: Dissertation
• Language: English
• Published: 2016
• Subjects: Materials Science; Electrical engineering; Carrier Mobilties; Geometrical Magnetoresistance; Hall Measurement; High Resistive Semiconductor; Pyrite; Transport Properties
• Online Access: http://hdl.handle.net/2286/R.I.38786

abstract: Measurements of the geometrical magnetoresistance of a conventional semiconductor, gallium arsenide (GaAs), and a more recently developed semiconductor, iron pyrite (FeS2) were measured in the Corbino disc geometry as a function of magnetic field to determine the carrier mobility (μm). These results were compared with measurements of the Hall mobility (μH) made in the Van der Pauw configuration. The scattering coefficient (ξ), defined as the ratio between magnetoresistance and Hall mobility (μm/μH), was determined experimentally for GaAs and natural pyrite from 300 K to 4.2 K. The effect of contact resistance and heating on the measurement accuracy is discussed. === Dissertation/Thesis === Masters Thesis Materials Science and Engineering 2016