In-field Built-in Self-test for Measuring RF Transmitter Power and Gain

abstract: RF transmitter manufacturers go to great extremes and expense to ensure that their product meets the RF output power requirements for which they are designed. Therefore, there is an urgent need for in-field monitoring of output power and gain to bring down the costs of RF transceiver testi...

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Other Authors: Gangula, Sudheer Kumar Reddy (Author)
Format: Dissertation
Language:English
Published: 2015
Subjects:
Online Access:http://hdl.handle.net/2286/R.I.36378
id ndltd-asu.edu-item-36378
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spelling ndltd-asu.edu-item-363782018-06-22T03:06:46Z In-field Built-in Self-test for Measuring RF Transmitter Power and Gain abstract: RF transmitter manufacturers go to great extremes and expense to ensure that their product meets the RF output power requirements for which they are designed. Therefore, there is an urgent need for in-field monitoring of output power and gain to bring down the costs of RF transceiver testing and ensure product reliability. Built-in self-test (BIST) techniques can perform such monitoring without the requirement for expensive RF test equipment. In most BIST techniques, on-chip resources, such as peak detectors, power detectors, or envelope detectors are used along with frequency down conversion to analyze the output of the design under test (DUT). However, this conversion circuitry is subject to similar process, voltage, and temperature (PVT) variations as the DUT and affects the measurement accuracy. So, it is important to monitor BIST performance over time, voltage and temperature, such that accurate in-field measurements can be performed. In this research, a multistep BIST solution using only baseband signals for test analysis is presented. An on-chip signal generation circuit, which is robust with respect to time, supply voltage, and temperature variations is used for self-calibration of the BIST system before the DUT measurement. Using mathematical modelling, an analytical expression for the output signal is derived first and then test signals are devised to extract the output power of the DUT. By utilizing a standard 180nm IBM7RF CMOS process, a 2.4GHz low power RF IC incorporated with the proposed BIST circuitry and on-chip test signal source is designed and fabricated. Experimental results are presented, which show this BIST method can monitor the DUT’s output power with +/- 0.35dB accuracy over a 20dB power dynamic range. Dissertation/Thesis Gangula, Sudheer Kumar Reddy (Author) Kitchen, Jennifer (Advisor) Ozev, Sule (Committee member) Ogras, Umit (Committee member) Arizona State University (Publisher) Electrical engineering BIST Calibration RF transmitter eng 49 pages Masters Thesis Electrical Engineering 2015 Masters Thesis http://hdl.handle.net/2286/R.I.36378 http://rightsstatements.org/vocab/InC/1.0/ All Rights Reserved 2015
collection NDLTD
language English
format Dissertation
sources NDLTD
topic Electrical engineering
BIST
Calibration
RF transmitter
spellingShingle Electrical engineering
BIST
Calibration
RF transmitter
In-field Built-in Self-test for Measuring RF Transmitter Power and Gain
description abstract: RF transmitter manufacturers go to great extremes and expense to ensure that their product meets the RF output power requirements for which they are designed. Therefore, there is an urgent need for in-field monitoring of output power and gain to bring down the costs of RF transceiver testing and ensure product reliability. Built-in self-test (BIST) techniques can perform such monitoring without the requirement for expensive RF test equipment. In most BIST techniques, on-chip resources, such as peak detectors, power detectors, or envelope detectors are used along with frequency down conversion to analyze the output of the design under test (DUT). However, this conversion circuitry is subject to similar process, voltage, and temperature (PVT) variations as the DUT and affects the measurement accuracy. So, it is important to monitor BIST performance over time, voltage and temperature, such that accurate in-field measurements can be performed. In this research, a multistep BIST solution using only baseband signals for test analysis is presented. An on-chip signal generation circuit, which is robust with respect to time, supply voltage, and temperature variations is used for self-calibration of the BIST system before the DUT measurement. Using mathematical modelling, an analytical expression for the output signal is derived first and then test signals are devised to extract the output power of the DUT. By utilizing a standard 180nm IBM7RF CMOS process, a 2.4GHz low power RF IC incorporated with the proposed BIST circuitry and on-chip test signal source is designed and fabricated. Experimental results are presented, which show this BIST method can monitor the DUT’s output power with +/- 0.35dB accuracy over a 20dB power dynamic range. === Dissertation/Thesis === Masters Thesis Electrical Engineering 2015
author2 Gangula, Sudheer Kumar Reddy (Author)
author_facet Gangula, Sudheer Kumar Reddy (Author)
title In-field Built-in Self-test for Measuring RF Transmitter Power and Gain
title_short In-field Built-in Self-test for Measuring RF Transmitter Power and Gain
title_full In-field Built-in Self-test for Measuring RF Transmitter Power and Gain
title_fullStr In-field Built-in Self-test for Measuring RF Transmitter Power and Gain
title_full_unstemmed In-field Built-in Self-test for Measuring RF Transmitter Power and Gain
title_sort in-field built-in self-test for measuring rf transmitter power and gain
publishDate 2015
url http://hdl.handle.net/2286/R.I.36378
_version_ 1718700945702912000