Characterization of Interface State in Silicon Carbide Metal Oxide Semiconductor Capacitors
abstract: Silicon carbide (SiC) has always been considered as an excellent material for high temperature and high power devices. Since SiC is the only compound semiconductor whose native oxide is silicon dioxide (SiO2), it puts SiC in a unique position. Although SiC metal oxide semiconductor (MOS) t...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2015
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| Online Access: | http://hdl.handle.net/2286/R.I.34772 |