Polarization and Electronic State Configuration of III-N Surfaces and Plasma-Enhanced Atomic Layer Deposited Dielectric Interfaces
abstract: GaN and AlGaN have shown great potential in next-generation power and RF electronics. However, these devices are limited by reliability issues such as leakage current and current collapse that result from surface and interface states on GaN and AlGaN. This dissertation, therefore, examined...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2015
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| Online Access: | http://hdl.handle.net/2286/R.I.30022 |