High-Quality Extended-Wavelength Materials for Optoelectronic Applications
abstract: Photodetectors in the 1.7 to 4.0 μm range are being commercially developed on InP substrates to meet the needs of longer wavelength applications such as thermal and medical sensing. Currently, these devices utilize high indium content metamorphic Ga1-xInxAs (x > 0.53) layers to e...
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| Format: | Dissertation |
| Language: | English |
| Published: |
2013
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| Online Access: | http://hdl.handle.net/2286/R.I.16446 |