Material Properties of MBE Grown ZnTe, GaSb and Their Heterostructures for Optoelectronic Device Applications
abstract: Recently a new materials platform consisting of semiconductors grown on GaSb and InAs substrates with lattice constants close to 6.1 A was proposed by our group for various electronic and optoelectronic applications. This materials platform consists of both II-VI (MgZnCdHg)(SeTe) and III-V...
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| Format: | Doctoral Thesis |
| Language: | English |
| Published: |
2012
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| Online Access: | http://hdl.handle.net/2286/R.I.15804 |