Effect of Helium Ion Irradiation on the Tunneling Behavior in Niobium/Aluminum/Aluminum Oxide/Niobium Josephson Junctions

abstract: The study of high energy particle irradiation effect on Josephson junction tri-layers is relevant to applications in space and radioactive environments. It also allows us to investigate the influence of defects and interfacial intermixing on the junction electrical characteristics. In this...

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Other Authors: Zhang, Tiantian (Author)
Format: Dissertation
Language:English
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/2286/R.I.15148
id ndltd-asu.edu-item-15148
record_format oai_dc
spelling ndltd-asu.edu-item-151482018-06-22T03:03:13Z Effect of Helium Ion Irradiation on the Tunneling Behavior in Niobium/Aluminum/Aluminum Oxide/Niobium Josephson Junctions abstract: The study of high energy particle irradiation effect on Josephson junction tri-layers is relevant to applications in space and radioactive environments. It also allows us to investigate the influence of defects and interfacial intermixing on the junction electrical characteristics. In this work, we studied the influence of 2MeV Helium ion irradiation with doses up to 5.2×1016 ions/cm2 on the tunneling behavior of Nb/Al/AlOx/Nb Josephson junctions. Structural and analytical TEM characterization, combined with SRIM modeling, indicates that over 4nm of intermixing occurred at the interfaces. EDX analysis after irradiation, suggests that the Al and O compositions from the barrier are collectively distributed together over a few nanometers. Surprisingly, the IV characteristics were largely unchanged. The normal resistance, Rn, increased slightly (<20%) after the initial dose of 3.5×1015 ions/cm2 and remained constant after that. This suggests that tunnel barrier electrical properties were not affected much, despite the significant changes in the chemical distribution of the barrier's Al and O shown in SRIM modeling and TEM pictures. The onset of quasi-particle current, sum of energy gaps (2&#916;), dropped systematically from 2.8meV to 2.6meV with increasing dosage. Similarly, the temperature onset of the Josephson current dropped from 9.2K to 9.0K. This suggests that the order parameter at the barrier interface has decreased as a result of a reduced mean free path in the Al proximity layer and a reduction in the transition temperature of the Nb electrode near the barrier. The dependence of Josephson current on the magnetic field and temperature does not change significantly with irradiation, suggesting that intermixing into the Nb electrode is significantly less than the penetration depth. Dissertation/Thesis Zhang, Tiantian (Author) Newman, Nathan (Advisor) Rowell, John M (Committee member) Singh, Rakesh K (Committee member) Chamberlin, Ralph (Committee member) Wang, Robert (Committee member) Arizona State University (Publisher) Materials Science Irradiation Josephson Junctions Tunneling Behavior eng 89 pages M.S. Materials Science and Engineering 2012 Masters Thesis http://hdl.handle.net/2286/R.I.15148 http://rightsstatements.org/vocab/InC/1.0/ All Rights Reserved 2012
collection NDLTD
language English
format Dissertation
sources NDLTD
topic Materials Science
Irradiation
Josephson Junctions
Tunneling Behavior
spellingShingle Materials Science
Irradiation
Josephson Junctions
Tunneling Behavior
Effect of Helium Ion Irradiation on the Tunneling Behavior in Niobium/Aluminum/Aluminum Oxide/Niobium Josephson Junctions
description abstract: The study of high energy particle irradiation effect on Josephson junction tri-layers is relevant to applications in space and radioactive environments. It also allows us to investigate the influence of defects and interfacial intermixing on the junction electrical characteristics. In this work, we studied the influence of 2MeV Helium ion irradiation with doses up to 5.2×1016 ions/cm2 on the tunneling behavior of Nb/Al/AlOx/Nb Josephson junctions. Structural and analytical TEM characterization, combined with SRIM modeling, indicates that over 4nm of intermixing occurred at the interfaces. EDX analysis after irradiation, suggests that the Al and O compositions from the barrier are collectively distributed together over a few nanometers. Surprisingly, the IV characteristics were largely unchanged. The normal resistance, Rn, increased slightly (<20%) after the initial dose of 3.5×1015 ions/cm2 and remained constant after that. This suggests that tunnel barrier electrical properties were not affected much, despite the significant changes in the chemical distribution of the barrier's Al and O shown in SRIM modeling and TEM pictures. The onset of quasi-particle current, sum of energy gaps (2&#916;), dropped systematically from 2.8meV to 2.6meV with increasing dosage. Similarly, the temperature onset of the Josephson current dropped from 9.2K to 9.0K. This suggests that the order parameter at the barrier interface has decreased as a result of a reduced mean free path in the Al proximity layer and a reduction in the transition temperature of the Nb electrode near the barrier. The dependence of Josephson current on the magnetic field and temperature does not change significantly with irradiation, suggesting that intermixing into the Nb electrode is significantly less than the penetration depth. === Dissertation/Thesis === M.S. Materials Science and Engineering 2012
author2 Zhang, Tiantian (Author)
author_facet Zhang, Tiantian (Author)
title Effect of Helium Ion Irradiation on the Tunneling Behavior in Niobium/Aluminum/Aluminum Oxide/Niobium Josephson Junctions
title_short Effect of Helium Ion Irradiation on the Tunneling Behavior in Niobium/Aluminum/Aluminum Oxide/Niobium Josephson Junctions
title_full Effect of Helium Ion Irradiation on the Tunneling Behavior in Niobium/Aluminum/Aluminum Oxide/Niobium Josephson Junctions
title_fullStr Effect of Helium Ion Irradiation on the Tunneling Behavior in Niobium/Aluminum/Aluminum Oxide/Niobium Josephson Junctions
title_full_unstemmed Effect of Helium Ion Irradiation on the Tunneling Behavior in Niobium/Aluminum/Aluminum Oxide/Niobium Josephson Junctions
title_sort effect of helium ion irradiation on the tunneling behavior in niobium/aluminum/aluminum oxide/niobium josephson junctions
publishDate 2012
url http://hdl.handle.net/2286/R.I.15148
_version_ 1718699825382293504