Polarization Effects in Group III-Nitride Materials and Devices

Polarization Effects in Group III-Nitride Materials and Devices

abstract: Group III-nitride semiconductors have wide application in optoelectronic devices. Spontaneous and piezoelectric polarization effects have been found to be critical for electric and optical properties of group III-nitrides. In this dissertation, firstly, the crystal orientation dependence o...

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Bibliographic Details
Other Authors:	Wei, Qiyuan (Author)
Format:	Doctoral Thesis
Language:	English
Published:	2012
Subjects:	Physics Materials Science electron holography gallium nitride non-polar and semi-polar growth piezoelectric and spontaneous polarization quantum well two-dimensional electron and hole gas
Online Access:	http://hdl.handle.net/2286/R.I.14643

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