Cold-wall low-pressure chemical-vapor-deposited silicon nitride for use as the undergate dielectric in field-effect transistors by David Robert Clark.

Cold-wall low-pressure chemical-vapor-deposited silicon nitride for use as the undergate dielectric in field-effect transistors by David Robert Clark.

Bibliographic Details
Main Author: Clark, David Robert
Language:en_US
Published: The University of Arizona. 1981
Subjects:
Field-effect transistors.
Dielectric films.
Electric insulators and insulation > Silicon nitride.
Silicon nitride.
Online Access:http://hdl.handle.net/10150/566378

Internet

http://hdl.handle.net/10150/566378

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