OPTICAL PROPERTIES OF RADIATION DAMAGED SILICON-CARBIDE

• Main Author: Ballart, Ralph
• Other Authors: Young, Richard
• Language: en_US
• Published: The University of Arizona. 1980
• Subjects: Silicon carbide > Effect of radiation on.; Silicon carbide.; Amorphous semiconductors.
• Online Access: http://hdl.handle.net/10150/282581

The reflectivity of crystalline and radiation-damaged silicon carbide and silicon has been measured in the 2-12 eV spectral region. Measurements were made using a standard Seya-Namioka Monochrometer which was modified to compensate for the fluctuations of the light source and interfaced to a micro-computer to facilitate data collection. The reflectivities of crystalline silicon carbide polytypes 6H, 15R, and 4H were found to be similar and the reflectivity of 3C-SiC showed agreement with the predictions of published band structure calculations. The observed reflectivity of radiation damage SiC agreed with the prediction of a simple model which takes into account the breakdown of k(→) -conservation and uses a realistic Bethe-lattice Hamiltonian to calculate the amorphous valence density of electron states.