Characterization and design of the complementary JFET LAMBDA-DIODE SRAM

Characterization and design of the complementary JFET LAMBDA-DIODE SRAM

The LAMBDA-DIODE was invented in integrated-circuit form in 1974. There was a proposal about this device's application in memory circuits at that time. This thesis is to evaluate the circuit performance of the COMPLEMENTARY JFET LAMBDA-DIODE SRAM. It investigates the speed, power consumption an...

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Bibliographic Details
Main Author: Song, Shiunn Luen Steven, 1960-
Other Authors: Schrimpf, Ronald D.
Language:en_US
Published: The University of Arizona. 1988
Subjects:
Junction transistors.
Field-effect transistors.
Integrated circuits > Design.
Online Access:http://hdl.handle.net/10150/276882
id ndltd-arizona.edu-oai-arizona.openrepository.com-10150-276882
record_format oai_dc
spelling ndltd-arizona.edu-oai-arizona.openrepository.com-10150-2768822015-10-23T05:02:31Z Characterization and design of the complementary JFET LAMBDA-DIODE SRAM Song, Shiunn Luen Steven, 1960- Schrimpf, Ronald D. Junction transistors. Field-effect transistors. Integrated circuits -- Design. The LAMBDA-DIODE was invented in integrated-circuit form in 1974. There was a proposal about this device's application in memory circuits at that time. This thesis is to evaluate the circuit performance of the COMPLEMENTARY JFET LAMBDA-DIODE SRAM. It investigates the speed, power consumption and chip area of this circuit compared with the JFET CROSS COUPLED SRAM by using SPICE and breadboard simulation techniques. The results show positive signs of the Λ-DIODE's feasibility for use in VLSI static memory circuits from the chip area aspect if the parasitic capacitance of the JFET device could be minimized to reduce the power delay product. 1988 text Thesis-Reproduction (electronic) http://hdl.handle.net/10150/276882 22499577 1335701 .b17444457 en_US Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. The University of Arizona.
collection NDLTD
language en_US
sources NDLTD
topic Junction transistors.
Field-effect transistors.
Integrated circuits -- Design.
spellingShingle Junction transistors.
Field-effect transistors.
Integrated circuits -- Design.
Song, Shiunn Luen Steven, 1960-
Characterization and design of the complementary JFET LAMBDA-DIODE SRAM
description The LAMBDA-DIODE was invented in integrated-circuit form in 1974. There was a proposal about this device's application in memory circuits at that time. This thesis is to evaluate the circuit performance of the COMPLEMENTARY JFET LAMBDA-DIODE SRAM. It investigates the speed, power consumption and chip area of this circuit compared with the JFET CROSS COUPLED SRAM by using SPICE and breadboard simulation techniques. The results show positive signs of the Λ-DIODE's feasibility for use in VLSI static memory circuits from the chip area aspect if the parasitic capacitance of the JFET device could be minimized to reduce the power delay product.
author2 Schrimpf, Ronald D.
author_facet Schrimpf, Ronald D.
Song, Shiunn Luen Steven, 1960-
author Song, Shiunn Luen Steven, 1960-
author_sort Song, Shiunn Luen Steven, 1960-
title Characterization and design of the complementary JFET LAMBDA-DIODE SRAM
title_short Characterization and design of the complementary JFET LAMBDA-DIODE SRAM
title_full Characterization and design of the complementary JFET LAMBDA-DIODE SRAM
title_fullStr Characterization and design of the complementary JFET LAMBDA-DIODE SRAM
title_full_unstemmed Characterization and design of the complementary JFET LAMBDA-DIODE SRAM
title_sort characterization and design of the complementary jfet lambda-diode sram
publisher The University of Arizona.
publishDate 1988
url http://hdl.handle.net/10150/276882
work_keys_str_mv AT songshiunnluensteven1960 characterizationanddesignofthecomplementaryjfetlambdadiodesram
_version_ 1718102389406302208

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