Interface Formation Between High Dielectric Permittivity Films and III-V Compound Semiconductors using HF Chemistries and Atomic Layer Deposition
In-based III-V compound semiconductors have higher electron mobilities than either Si or Ge and direct band gaps. These properties could enable the fabrication of low power, high-speed n-channel metal oxide semiconductor field effect transistors (MOSFETs) and optoelectronics combining MOS technology...
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| Language: | en |
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The University of Arizona.
2011
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| Online Access: | http://hdl.handle.net/10150/204301 |