Interface Formation Between High Dielectric Permittivity Films and III-V Compound Semiconductors using HF Chemistries and Atomic Layer Deposition

Interface Formation Between High Dielectric Permittivity Films and III-V Compound Semiconductors using HF Chemistries and Atomic Layer Deposition

In-based III-V compound semiconductors have higher electron mobilities than either Si or Ge and direct band gaps. These properties could enable the fabrication of low power, high-speed n-channel metal oxide semiconductor field effect transistors (MOSFETs) and optoelectronics combining MOS technology...

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Bibliographic Details
Main Author: Lie, Fee Li
Other Authors: Muscat, Anthony J.
Language:en
Published: The University of Arizona. 2011
Subjects:
atomic layer deposition
high-k
hydrofluoric acid
III-V
native oxide removal
surface chemistry
Online Access:http://hdl.handle.net/10150/204301

Internet

http://hdl.handle.net/10150/204301

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