CHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS.

The physical properties of single crystals of samarium monosulfide exhibit a first order semiconductor-to-metal transition near 6.5 kbar. However, thin films of SmS show only a gradual change in their properties on applying pressure and this renders the technical utilization of the material difficul...

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Main Author: HILLMAN, PAUL DALLAS.
Other Authors: MacLeod, Angus
Language:en
Published: The University of Arizona. 1984
Subjects:
Online Access:http://hdl.handle.net/10150/187650
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spelling ndltd-arizona.edu-oai-arizona.openrepository.com-10150-1876502015-10-23T04:34:51Z CHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS. HILLMAN, PAUL DALLAS. MacLeod, Angus Gibbs, Hyatt Optical films. Phase transformations (Statistical physics) Samarium -- Optical properties. Thin films. Vapor-plating. The physical properties of single crystals of samarium monosulfide exhibit a first order semiconductor-to-metal transition near 6.5 kbar. However, thin films of SmS show only a gradual change in their properties on applying pressure and this renders the technical utilization of the material difficult. Several mechanisms have been proposed as the cause of the smoothing of the transition. They include intrinsic stress, impurities, grain size, improper stoichiometry, and porosity, all of which can be traced to the physical vapor deposition techniques employed in preparing the films. In contrast, chemical vapor deposition was employed in this study because previous work had shown that it could minimize these detrimental modifications in thin films. A new CVD system was tested using a volatile organometallic as the samarium source and reacting it with H₂S. The deposited films contained considerable amounts of oxygen as evidenced by structure analysis, and the origin was traced to the samarium organometallic. The reaction of oxygen-free samarium tricyclopentadienyl with H₂S as well as chemical transport are suggested for deposition of stress-free SmS thin films in future work. 1984 text Dissertation-Reproduction (electronic) http://hdl.handle.net/10150/187650 690920561 8412667 en Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. The University of Arizona.
collection NDLTD
language en
sources NDLTD
topic Optical films.
Phase transformations (Statistical physics)
Samarium -- Optical properties.
Thin films.
Vapor-plating.
spellingShingle Optical films.
Phase transformations (Statistical physics)
Samarium -- Optical properties.
Thin films.
Vapor-plating.
HILLMAN, PAUL DALLAS.
CHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS.
description The physical properties of single crystals of samarium monosulfide exhibit a first order semiconductor-to-metal transition near 6.5 kbar. However, thin films of SmS show only a gradual change in their properties on applying pressure and this renders the technical utilization of the material difficult. Several mechanisms have been proposed as the cause of the smoothing of the transition. They include intrinsic stress, impurities, grain size, improper stoichiometry, and porosity, all of which can be traced to the physical vapor deposition techniques employed in preparing the films. In contrast, chemical vapor deposition was employed in this study because previous work had shown that it could minimize these detrimental modifications in thin films. A new CVD system was tested using a volatile organometallic as the samarium source and reacting it with H₂S. The deposited films contained considerable amounts of oxygen as evidenced by structure analysis, and the origin was traced to the samarium organometallic. The reaction of oxygen-free samarium tricyclopentadienyl with H₂S as well as chemical transport are suggested for deposition of stress-free SmS thin films in future work.
author2 MacLeod, Angus
author_facet MacLeod, Angus
HILLMAN, PAUL DALLAS.
author HILLMAN, PAUL DALLAS.
author_sort HILLMAN, PAUL DALLAS.
title CHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS.
title_short CHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS.
title_full CHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS.
title_fullStr CHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS.
title_full_unstemmed CHEMICAL VAPOR DEPOSITION OF SAMARIUM COMPOUNDS FOR THE DEVELOPMENT OF THIN FILM OPTICAL SWITCHES BASED ON PHASE TRANSITION MATERIALS.
title_sort chemical vapor deposition of samarium compounds for the development of thin film optical switches based on phase transition materials.
publisher The University of Arizona.
publishDate 1984
url http://hdl.handle.net/10150/187650
work_keys_str_mv AT hillmanpauldallas chemicalvapordepositionofsamariumcompoundsforthedevelopmentofthinfilmopticalswitchesbasedonphasetransitionmaterials
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