Nanocrystalline Silicon Solar Cells Deposited via Pulsed PECVD at 150°C Substrate Temperature

Nanocrystalline Silicon Solar Cells Deposited via Pulsed PECVD at 150°C Substrate Temperature

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A series of experiments was carried out to compare the structural and electronic properties of intrinsic nanocrystalline silicon (nc-Si:H) thin films deposited via continuous wave (cw) and pulsed (p)-PECVD at 150°C substrate temperature. Working at this temperature allows for the easy transfer of fi...

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Bibliographic Details
Main Author: Rahman, Khalifa Mohammad Azizur
Language:en
Published: 2010
Subjects:
Thin Film
Solar Cells
Nanocrystalline Silicon
Pulsed PECVD
Electrical and Computer Engineering
Online Access:http://hdl.handle.net/10012/5446

Internet

http://hdl.handle.net/10012/5446

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