Tensile-Strained Ge/InₓGa₁₋ₓAs Heterostructures for Electronic and Photonic Applications
The continued scaling of feature size in silicon (Si)-based complimentary metal-oxide-semiconductor (CMOS) technology has led to a rapid increase in compute power. Resulting from increases in device densities and advances in materials and transistor design, integrated circuit (IC) performance has co...
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| Format: | Others |
| Language: | en_US |
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Virginia Tech
2017
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| Online Access: | http://hdl.handle.net/10919/78129 http://scholar.lib.vt.edu/theses/available/etd-05192016-154719/ |