Small Signal Equivalent Circuit Extraction From A Gallium Arsenide MESFET Device
The development of microwave Gallium Arsenide Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices. With these MESFET devices comes the need to model them. This thesis extracts a small signal equiv...
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Virginia Tech
2014
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| Online Access: | http://hdl.handle.net/10919/36952 http://scholar.lib.vt.edu/theses/available/etd-7497-162858/ |
| Summary: | The development of microwave Gallium Arsenide Metal Semiconductor Field
Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular
phones, and other electronic devices. With these MESFET devices comes the need to
model them. This thesis extracts a small signal equivalent circuit model from a Gallium
Arsenide MESFET device. The approach taken in this thesis is to use measured S-
parameters to extract a small signal equivalent circuit model by optimization. Small signal
models and S-parameters are explained. The Simplex Method is used to optimize the
small signal equivalent circuit model. A thorough analysis of the strengths and
weaknesses of the Simplex method is performed. === Master of Science |
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