Optical studies of highly-doped GaAs:C
Infrared reflectivity and transmittance measurements (200=5000 cm^-1) were carried out on heavily-doped GaAs:C films grown by molecular beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum develops in the 1000=3000 cm^-1 region and the one-phonon band near 270 cm^-1 ride...
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| Format: | Others |
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Virginia Tech
2014
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| Online Access: | http://hdl.handle.net/10919/28927 http://scholar.lib.vt.edu/theses/available/etd-09102001-091811/ |