Hard Switched Robustness of Wide Bandgap Power Semiconductor Devices
As power conversion technology is being integrated further into high-reliability environments such as aerospace and electric vehicle applications, a full analysis and understanding of the system's robustness under operating conditions inside and outside the safe-operating-area is necessary. The...
Main Author: | Kozak, Joseph Peter |
---|---|
Other Authors: | Electrical Engineering |
Format: | Others |
Language: | en |
Published: |
Virginia Tech
2021
|
Subjects: | |
Online Access: | http://hdl.handle.net/10919/104874 |
Similar Items
-
Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications
by: Chao-Tsung Ma, et al.
Published: (2021-01-01) -
Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
by: Colmenares, Juan
Published: (2016) -
Color Centers Enabled by Direct Femto-Second Laser Writing in Wide Bandgap Semiconductors
by: Stefania Castelletto, et al.
Published: (2021-12-01) -
Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors
by: Mrvić Jovan, et al.
Published: (2020-01-01) -
Robust Control of Wide Bandgap Power Electronics Device Enabled Smart Grid
Published: (2017)