Resistive RAM for Space Applications & the Impact of Scaling Access Circuitry
Resistive random access memories (RRAM) have gained interest in recent years as a contender for the future of nonvolatile memory (NVM) due to their ease of integration into the CMOS process, for their scaling potential, the possibilities of which have yet to be fully realized, and for their robust r...
Main Author: | Weeden-Wright, Stephanie LuAnn |
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Other Authors: | Ronald Schrimpf |
Format: | Others |
Language: | en |
Published: |
VANDERBILT
2014
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Subjects: | |
Online Access: | http://etd.library.vanderbilt.edu/available/etd-11232014-203645/ |
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