Heavy Ion-Induced Single Particle Displacement Damage in Silicon
Displacement damage from individual heavy ions results in discrete, measurable electrical degradation in <sup>252</sup>Cf-irradiated silicon diodes. This work presents measurements of discrete increases in diode reverse current, or current steps, associated with damage from fission fragm...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2013
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ |