LOW FREQUENCY NOISE AND CHARGE TRAPPING IN MOSFETS
We have studied 1/f noise and total-dose response associated with Al2O3/SiOxNy/Si(100) gate dielectrics. Both the radiation-induced threshold-voltage shifts and the low-frequency noise are significantly larger than are typically observed for high-quality thermal SiO2 thin films of comparable thickne...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2004
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-11142004-232600/ |