Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices
Defects that lie at or near the semiconductor-oxide interface of MOS transistors were characterized using 1/f noise and charge pumping measurements. The frequency, gate-voltage, and temperature dependence of the noise were investigated for moisture-exposed and control Si nMOS and pMOS transistors be...
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| Format: | Others |
| Language: | en |
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VANDERBILT
2011
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ |