Multi-Level Modeling of Total Ionizing Dose in a-SiO2: First Principles to Circuits
Oxygen vacancies have long been known to be the dominant intrinsic defect in amorphous SiO2 . They exist, in concentrations dependent on processing conditions, as neutral defects in thermal oxides without usually causing any significant deleterious effects, with some spatial and energy distribution....
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| Format: | Others |
| Language: | en |
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VANDERBILT
2003
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| Online Access: | http://etd.library.vanderbilt.edu/available/etd-07242003-120620/ |