IRRADIATION AND TEMPERATURE CHARACTERIZATION FOR A 32NM RF SILICON-ON-INSULATOR CMOS PROCESS

The impacts of total ionizing dose (TID), temperature and RF bias on the DC and RF performance of a commercial 32 nm RF SOI CMOS technology are presented. Temperature dependence is shown to be the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined effects of...

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Main Author:	Haeffner, Timothy D.
Other Authors:	Dr. Ronald D. Schrimpf
Format:	Others
Language:	en
Published:	VANDERBILT 2015
Subjects:	Electrical Engineering
Online Access:	http://etd.library.vanderbilt.edu/available/etd-03302015-110300/

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spelling	ndltd-VANDERBILT-oai-VANDERBILTETD-etd-03302015-1103002015-03-31T05:05:09Z IRRADIATION AND TEMPERATURE CHARACTERIZATION FOR A 32NM RF SILICON-ON-INSULATOR CMOS PROCESS Haeffner, Timothy D. Electrical Engineering The impacts of total ionizing dose (TID), temperature and RF bias on the DC and RF performance of a commercial 32 nm RF SOI CMOS technology are presented. Temperature dependence is shown to be the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined effects of elevated temperature and TID showing the most pronounced degradation. The most significant effect due to TID is an increase in off-state leakage current. Key DC and RF parameters of this 32 nm RF process degrade less than those of an otherwise similar 45 nm RF SOI CMOS process. The implications of the combined TID and temperature response are discussed for low-power RF design. Dr. Ronald D. Schrimpf Dr. Lloyd W. Massengill VANDERBILT 2015-03-30 text application/pdf http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ en unrestricted I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Vanderbilt University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.
collection	NDLTD
language	en
format	Others
sources	NDLTD
topic	Electrical Engineering
spellingShingle	Electrical Engineering Haeffner, Timothy D. IRRADIATION AND TEMPERATURE CHARACTERIZATION FOR A 32NM RF SILICON-ON-INSULATOR CMOS PROCESS
description	The impacts of total ionizing dose (TID), temperature and RF bias on the DC and RF performance of a commercial 32 nm RF SOI CMOS technology are presented. Temperature dependence is shown to be the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined effects of elevated temperature and TID showing the most pronounced degradation. The most significant effect due to TID is an increase in off-state leakage current. Key DC and RF parameters of this 32 nm RF process degrade less than those of an otherwise similar 45 nm RF SOI CMOS process. The implications of the combined TID and temperature response are discussed for low-power RF design.
author2	Dr. Ronald D. Schrimpf
author_facet	Dr. Ronald D. Schrimpf Haeffner, Timothy D.
author	Haeffner, Timothy D.
author_sort	Haeffner, Timothy D.
title	IRRADIATION AND TEMPERATURE CHARACTERIZATION FOR A 32NM RF SILICON-ON-INSULATOR CMOS PROCESS
title_short	IRRADIATION AND TEMPERATURE CHARACTERIZATION FOR A 32NM RF SILICON-ON-INSULATOR CMOS PROCESS
title_full	IRRADIATION AND TEMPERATURE CHARACTERIZATION FOR A 32NM RF SILICON-ON-INSULATOR CMOS PROCESS
title_fullStr	IRRADIATION AND TEMPERATURE CHARACTERIZATION FOR A 32NM RF SILICON-ON-INSULATOR CMOS PROCESS
title_full_unstemmed	IRRADIATION AND TEMPERATURE CHARACTERIZATION FOR A 32NM RF SILICON-ON-INSULATOR CMOS PROCESS
title_sort	irradiation and temperature characterization for a 32nm rf silicon-on-insulator cmos process
publisher	VANDERBILT
publishDate	2015
url	http://etd.library.vanderbilt.edu/available/etd-03302015-110300/
work_keys_str_mv	AT haeffnertimothyd irradiationandtemperaturecharacterizationfora32nmrfsilicononinsulatorcmosprocess
_version_	1716799914055303168

IRRADIATION AND TEMPERATURE CHARACTERIZATION FOR A 32NM RF SILICON-ON-INSULATOR CMOS PROCESS

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