Interaction between plasma and low-k dielectric materials
With the scaling of devices, integration of porous ultra low-κ dielectric materials into Cu interconnect becomes necessary. Low-k dielectric materials usually consist of a certain number of methyl groups and pores incorporated into a SiO₂ backbone structure to reduce the dielectric constant. They ar...
Main Author: | Bao, Junjing, 1981- |
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Format: | Others |
Language: | English |
Published: |
2008
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Subjects: | |
Online Access: | http://hdl.handle.net/2152/3820 |
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