Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology

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Bibliographic Details
Main Author:	Kim, Young-Hee
Format:	Others
Language:	English
Published:	2008
Subjects:	Dielectrics Hafnium oxide Electrodes Breakdown (Electricity) Interfaces (Physical sciences) Tantalum alloys Ruthenium compounds Silicon oxide
Online Access:	http://hdl.handle.net/2152/2044

id	ndltd-UTEXAS-oai-repositories.lib.utexas.edu-2152-2044
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spelling	ndltd-UTEXAS-oai-repositories.lib.utexas.edu-2152-20442015-09-20T16:50:26ZInterface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technologyKim, Young-HeeDielectricsHafnium oxideElectrodesBreakdown (Electricity)Interfaces (Physical sciences)Tantalum alloysRuthenium compoundsSilicon oxideNot availabletext2008-08-28T22:30:17Z2008-08-28T22:30:17Z20042008-08-28T22:30:17ZThesistextelectronicb60809826http://hdl.handle.net/2152/2044686832923143883b60809826engCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.
collection	NDLTD
language	English
format	Others
sources	NDLTD
topic	Dielectrics Hafnium oxide Electrodes Breakdown (Electricity) Interfaces (Physical sciences) Tantalum alloys Ruthenium compounds Silicon oxide
spellingShingle	Dielectrics Hafnium oxide Electrodes Breakdown (Electricity) Interfaces (Physical sciences) Tantalum alloys Ruthenium compounds Silicon oxide Kim, Young-Hee Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology
description	Not available === text
author	Kim, Young-Hee
author_facet	Kim, Young-Hee
author_sort	Kim, Young-Hee
title	Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology
title_short	Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology
title_full	Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology
title_fullStr	Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology
title_full_unstemmed	Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology
title_sort	interface engineering and reliability characteristics of hfo₂ with poly si gate and dual metal (ru-ta alloy, ru) gate electrode for beyond 65nm technology
publishDate	2008
url	http://hdl.handle.net/2152/2044
work_keys_str_mv	AT kimyounghee interfaceengineeringandreliabilitycharacteristicsofhfo2withpolysigateanddualmetalrutaalloyrugateelectrodeforbeyond65nmtechnology
_version_	1716820090952876032

Interface engineering and reliability characteristics of HfO₂ with poly Si gate and dual metal (Ru-Ta alloy, Ru) gate electrode for beyond 65nm technology

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