A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes

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Bibliographic Details
Main Author:	Kang, Changseok
Format:	Others
Language:	English
Published:	2008
Subjects:	Hafnium compounds Hafnium oxide Dielectrics Tantalum electrodes Metal oxide semiconductor field-effect transistors
Online Access:	http://hdl.handle.net/2152/1153

id	ndltd-UTEXAS-oai-repositories.lib.utexas.edu-2152-1153
record_format	oai_dc
spelling	ndltd-UTEXAS-oai-repositories.lib.utexas.edu-2152-11532015-09-20T16:49:33ZA study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodesKang, ChangseokHafnium compoundsHafnium oxideDielectricsTantalum electrodesMetal oxide semiconductor field-effect transistorsNot availabletext2008-08-28T21:48:59Z2008-08-28T21:48:59Z20042008-08-28T21:48:59ZThesiselectronicb59011178http://hdl.handle.net/2152/1153575511113143280engCopyright is held by the author. Presentation of this material on the Libraries' web site by University Libraries, The University of Texas at Austin was made possible under a limited license grant from the author who has retained all copyrights in the works.
collection	NDLTD
language	English
format	Others
sources	NDLTD
topic	Hafnium compounds Hafnium oxide Dielectrics Tantalum electrodes Metal oxide semiconductor field-effect transistors
spellingShingle	Hafnium compounds Hafnium oxide Dielectrics Tantalum electrodes Metal oxide semiconductor field-effect transistors Kang, Changseok A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
description	Not available === text
author	Kang, Changseok
author_facet	Kang, Changseok
author_sort	Kang, Changseok
title	A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
title_short	A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
title_full	A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
title_fullStr	A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
title_full_unstemmed	A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes
title_sort	study on the material and device characteristics of hafnium oxynitride mosfets with tan gate electrodes
publishDate	2008
url	http://hdl.handle.net/2152/1153
work_keys_str_mv	AT kangchangseok astudyonthematerialanddevicecharacteristicsofhafniumoxynitridemosfetswithtangateelectrodes AT kangchangseok studyonthematerialanddevicecharacteristicsofhafniumoxynitridemosfetswithtangateelectrodes
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A study on the material and device characteristics of hafnium oxynitride MOSFETs with TaN gate electrodes

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