In-vivo radiation diode dosimetry for therapeutic photon beams

• Main Author: Saini, Amarjit Singh
• Format: Others
• Published: Scholar Commons 2007
• Subjects: Quality assurance; Silicon detectors; Temperature dependence; Dose rate dependence; Energy dependence; American Studies; Arts and Humanities
• Online Access: http://scholarcommons.usf.edu/etd/2348; http://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=3347&context=etd

In-vivo dosimetry with diode detectors is used in radiation therapy as a quality assurance tool. The diode sensitivity under radiation depends upon temperature, dose rate and SDD (source-to-detector distance), field size, beam angle, and energy. This dissertation presents the first systematic and quantitative study of dosimetric characteristics for most of the commercial radiation diodes (n-type and p-type) under different radiation beams.In the temperature dependence study, the systematic study on the dose rate dependence of svwt (sensitivity variation with temperature) was performed. It was concluded that sufficient preirradiation can eliminate dose rate dependence of svwt. However, preirradiation cannot eliminate dose rate dependence of the diode sensitivity, S, itself. In the dose rate and SDD dependence study, it was shown that the p-type diodes do not always show less dose rate dependence than the n-type diodes. Preirradiation does not always reduce diode dose rate dependence. SDD dependence of diode sensitivity can be explained by the instantaneous dose rate dependence if sufficient buildup is provided to eliminate electron contamination. An empirical formula was proposed to fit the dose rate dependence of diode sensitivity. In the energy dependence study, the energy dependence diode detectors are quantified. The empirical theory to quantify this effect was developed. Monte Carlo simulation and the cavity theory are used to predict the energy dependence. It was concluded that the energy dependence does not depend on whether the diode is n- or p- type but rather depends mainly on the material around the die (buildup and its geometry). A systematic study of the correction factors for accurate diode dosimetry is presented in this dissertation.This dissertation has established a theoretical foundation for the modeling of the transient electric and radiation properties of the diode detectors, separately. We believe that the Monte Carlo simulations code for radiation transport should be coupled with the continuity equations to describe the charge transport in the diode detector, and thus provides a complete quantitative description of dosimetric characteristics of the diode detectors. The ultimate goal is to use the diode detector as an absolute dosimeter, rather than as a relative dosimeter.