Catalytic Oxidation of Methane using Single Crystal Silicon Carbide

SiC is a hard man-made material and has emerged as an excellent material for a wide range of applications which are exposed to extreme conditions such as high temperatures and harsh chemical environments. These applications range from SiC being used as an abrasive, to a refractory material, to a sem...

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Main Author: Gopalkrishna, Akshoy
Format: Others
Published: Scholar Commons 2003
Subjects:
Online Access:https://scholarcommons.usf.edu/etd/1377
https://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=2376&context=etd
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spelling ndltd-USF-oai-scholarcommons.usf.edu-etd-23762019-10-04T05:26:28Z Catalytic Oxidation of Methane using Single Crystal Silicon Carbide Gopalkrishna, Akshoy SiC is a hard man-made material and has emerged as an excellent material for a wide range of applications which are exposed to extreme conditions such as high temperatures and harsh chemical environments. These applications range from SiC being used as an abrasive, to a refractory material, to a semiconductor material for high power and high frequency electronic devices. The properties of the material for each application is different, with the semiconductor grade material for electronic devices being the most refined. SiC, with its excellent thermal properties and high resistance to harsh chemical environments, lends itself to being an ideal support for catalyst systems. Various characterisation & analysis techniques such as Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Gas Chromatography (GC) are used in this thesis to investigate the suitability of single crystal SiC for high temperature catalytic systems. Low temperature oxidation of methane was used to investigate the catalytic activity of: Porous and standard 4H-SiC with and without Pd Porous and Standard 6H-SiC with and without Pd. Nanocrystalline Beta-SiC powder with and without Pd. Part of the samples were impregnated with Pd using Palladium Nitrate (Pd (NO3)2) which is a common precursor for Pd. Activation treatments which were investigated were oxidation and reduction. Oxidation was generally better in activating the catalyst, as was expected, since the PdO phase is known to be more active in oxidising methane. A mixed set of Pd and PdO were observed by SEM and EDS which were the main characterisation techniques used to analyze the structure of the catalysts before and after the reaction. The Beta-SiC showed by far the best activity which could be attributed to the micro-crystalline powder format in which it was used, where as all other catalysts studied here were derived from crushed wafer pieces. Type II porous 4H-SiC was another of the samples which registered impressive results, vis-à-vis catalytic activity. 2003-04-07T07:00:00Z text application/pdf https://scholarcommons.usf.edu/etd/1377 https://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=2376&context=etd default Graduate Theses and Dissertations Scholar Commons Pd and PdO catalysts Oxidation of streams with lean methane concentration Semiconductor catalys supports SiC catalyst support Single crystal SiC American Studies Arts and Humanities
collection NDLTD
format Others
sources NDLTD
topic Pd and PdO catalysts
Oxidation of streams with lean methane concentration
Semiconductor catalys supports
SiC catalyst support
Single crystal SiC
American Studies
Arts and Humanities
spellingShingle Pd and PdO catalysts
Oxidation of streams with lean methane concentration
Semiconductor catalys supports
SiC catalyst support
Single crystal SiC
American Studies
Arts and Humanities
Gopalkrishna, Akshoy
Catalytic Oxidation of Methane using Single Crystal Silicon Carbide
description SiC is a hard man-made material and has emerged as an excellent material for a wide range of applications which are exposed to extreme conditions such as high temperatures and harsh chemical environments. These applications range from SiC being used as an abrasive, to a refractory material, to a semiconductor material for high power and high frequency electronic devices. The properties of the material for each application is different, with the semiconductor grade material for electronic devices being the most refined. SiC, with its excellent thermal properties and high resistance to harsh chemical environments, lends itself to being an ideal support for catalyst systems. Various characterisation & analysis techniques such as Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Gas Chromatography (GC) are used in this thesis to investigate the suitability of single crystal SiC for high temperature catalytic systems. Low temperature oxidation of methane was used to investigate the catalytic activity of: Porous and standard 4H-SiC with and without Pd Porous and Standard 6H-SiC with and without Pd. Nanocrystalline Beta-SiC powder with and without Pd. Part of the samples were impregnated with Pd using Palladium Nitrate (Pd (NO3)2) which is a common precursor for Pd. Activation treatments which were investigated were oxidation and reduction. Oxidation was generally better in activating the catalyst, as was expected, since the PdO phase is known to be more active in oxidising methane. A mixed set of Pd and PdO were observed by SEM and EDS which were the main characterisation techniques used to analyze the structure of the catalysts before and after the reaction. The Beta-SiC showed by far the best activity which could be attributed to the micro-crystalline powder format in which it was used, where as all other catalysts studied here were derived from crushed wafer pieces. Type II porous 4H-SiC was another of the samples which registered impressive results, vis-à-vis catalytic activity.
author Gopalkrishna, Akshoy
author_facet Gopalkrishna, Akshoy
author_sort Gopalkrishna, Akshoy
title Catalytic Oxidation of Methane using Single Crystal Silicon Carbide
title_short Catalytic Oxidation of Methane using Single Crystal Silicon Carbide
title_full Catalytic Oxidation of Methane using Single Crystal Silicon Carbide
title_fullStr Catalytic Oxidation of Methane using Single Crystal Silicon Carbide
title_full_unstemmed Catalytic Oxidation of Methane using Single Crystal Silicon Carbide
title_sort catalytic oxidation of methane using single crystal silicon carbide
publisher Scholar Commons
publishDate 2003
url https://scholarcommons.usf.edu/etd/1377
https://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=2376&context=etd
work_keys_str_mv AT gopalkrishnaakshoy catalyticoxidationofmethaneusingsinglecrystalsiliconcarbide
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