Characterization and Modeling of Planar Spiral Inductors and Pad Stack Parasitic Effects

• Main Author: Capwell, John
• Format: Others
• Published: Scholar Commons 2003
• Subjects: passive components; measurements; inter-connects; capacitors; substrate scalable; American Studies; Arts and Humanities
• Online Access: https://scholarcommons.usf.edu/etd/1335; https://scholarcommons.usf.edu/cgi/viewcontent.cgi?article=2334&context=etd

This thesis concentrates on RF/microwave characterization and modeling of planar spiral inductors and pad stack parasitics. The inductors varied in size from 1.9 to 15.3 nH. Several approaches were examined for modeling the planar spiral inductors. The approach developed herein is built around an existing composite model (available in commercial computer-aided design software), with added series and shunt impedances at both the input and output of the existing composite model. Artificial neural network (ANN) software was used to determine the correction impedance values. Another approach investigated was to model the S-parameters of the inductor using a space- mapping model of the input parameters for the existing model. The correction impedance modeling approach was theoretically sound but the level of accuracy need for the ANN model was not obtainable. The space mapping approach had merit but a substrate and parameter scalable model could not be achieved. A pad stack is a section of microstrip line that a surface mounted element is affixed to; these pad stacks are standardized for specific element sizes, so for example any 0805 (80 mils by 50 mils) element may have the same pad stack whether it is a capacitor, inductor or resistor. The pad stack models were necessary because a capacitor model originally developed at the University of South Florida did not include parasitic effects for different input connections. The pad stack parasitic models can be broken down into three types: dual-input, tri-input, and quad-input. Each of the dual- and tri- input models have input angles of either 0 degrees, 45 degrees, or 90 degrees. The models were developed using a combination of microstrip and lumped elements.