SYSTEMATICCHARACTERIZATION OFTHIN FILM LAYERS FORTHE DEVELOPMENT OFVERTICAL GaN-BASEDMISFETS
A systematic study was conducted on MIS capacitors, breakdown structures andTLM structures to study the quality of dierent layers and processes involvedin the manufacturing of vertical-enhancement-mode MISFETs. Furthermore, theinuence of of a nal post-metalization annealing-step is analyzed drawing...
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| Format: | Others |
| Language: | English |
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Uppsala universitet, Fasta tillståndets elektronik
2017
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| Online Access: | http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-341380 |
| Summary: | A systematic study was conducted on MIS capacitors, breakdown structures andTLM structures to study the quality of dierent layers and processes involvedin the manufacturing of vertical-enhancement-mode MISFETs. Furthermore, theinuence of of a nal post-metalization annealing-step is analyzed drawing theconclusion that it is advantageous to submit nal MISFET devices to an annealingprocess lasting at least 30 minutes and to a minimum of 300C to improve themodulation capabilities of the MISFET's gate module, although degradation ispresent on both metal contacts and the blocking capabilities of the p GaN layer. |
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