A 10 dBm 2.4 GHz CMOS PA
This report describes the assessment and design of a 10 dBm 2.4 GHz CMOS PA including driver stage. The PA is designed in a 0.18 um CMOS technology. A three stage PA has been designed due to the high voltage gain needed. Class F has been chosen for the output stage. An output filter short-circuitin...
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Norges teknisk-naturvitenskapelige universitet, Institutt for elektronikk og telekommunikasjon
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ndltd-UPSALLA1-oai-DiVA.org-ntnu-93172013-01-08T13:26:31ZA 10 dBm 2.4 GHz CMOS PAengKallerud, Torjus SelvénNorges teknisk-naturvitenskapelige universitet, Institutt for elektronikk og telekommunikasjonInstitutt for elektronikk og telekommunikasjon2006ntnudaimSIE6 elektronikkKrets- og systemkonstruksjonThis report describes the assessment and design of a 10 dBm 2.4 GHz CMOS PA including driver stage. The PA is designed in a 0.18 um CMOS technology. A three stage PA has been designed due to the high voltage gain needed. Class F has been chosen for the output stage. An output filter short-circuiting the second harmonic frequency and reflecting the third harmonic frequency is used to obtain the near-square drain voltage that is characteristic to class F. A lowered supply voltage of 0.9 V is used to avoid exceeding the transistor break-down voltage of 2 V. The typical output power achieved is 10.2 dBm. The drain efficiency of the output stage is 47.7 %, and the PAE of the entire PA is 30.5 %. The final layout excluding bonding pads consumes an area of 0.66 mm2, including four internal inductors consuming a total of 0.59 mm2. The PAE obtained is higher than those of a selection of recently published PAs that are comparable in technology, frequency and output power. Student thesisinfo:eu-repo/semantics/bachelorThesistexthttp://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-9317Local ntnudaim:1152application/pdfinfo:eu-repo/semantics/openAccess |
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English |
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Others
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ntnudaim SIE6 elektronikk Krets- og systemkonstruksjon |
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ntnudaim SIE6 elektronikk Krets- og systemkonstruksjon Kallerud, Torjus Selvén A 10 dBm 2.4 GHz CMOS PA |
description |
This report describes the assessment and design of a 10 dBm 2.4 GHz CMOS PA including driver stage. The PA is designed in a 0.18 um CMOS technology. A three stage PA has been designed due to the high voltage gain needed. Class F has been chosen for the output stage. An output filter short-circuiting the second harmonic frequency and reflecting the third harmonic frequency is used to obtain the near-square drain voltage that is characteristic to class F. A lowered supply voltage of 0.9 V is used to avoid exceeding the transistor break-down voltage of 2 V. The typical output power achieved is 10.2 dBm. The drain efficiency of the output stage is 47.7 %, and the PAE of the entire PA is 30.5 %. The final layout excluding bonding pads consumes an area of 0.66 mm2, including four internal inductors consuming a total of 0.59 mm2. The PAE obtained is higher than those of a selection of recently published PAs that are comparable in technology, frequency and output power. |
author |
Kallerud, Torjus Selvén |
author_facet |
Kallerud, Torjus Selvén |
author_sort |
Kallerud, Torjus Selvén |
title |
A 10 dBm 2.4 GHz CMOS PA |
title_short |
A 10 dBm 2.4 GHz CMOS PA |
title_full |
A 10 dBm 2.4 GHz CMOS PA |
title_fullStr |
A 10 dBm 2.4 GHz CMOS PA |
title_full_unstemmed |
A 10 dBm 2.4 GHz CMOS PA |
title_sort |
10 dbm 2.4 ghz cmos pa |
publisher |
Norges teknisk-naturvitenskapelige universitet, Institutt for elektronikk og telekommunikasjon |
publishDate |
2006 |
url |
http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-9317 |
work_keys_str_mv |
AT kallerudtorjusselven a10dbm24ghzcmospa AT kallerudtorjusselven 10dbm24ghzcmospa |
_version_ |
1716520505493684224 |