Implementing a Full-Band Monte Carlo Model for Zincblende Structure Semiconductors

During the work with this master's thesis a number of improvements have been made to the Monte Carlo program being developed at FFI. Algorithms for handling numerical band and scattering rate data have been constructed and integrated with the program. Of all the changes made in this work, m...

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Main Author: Bergslid, Tore Sivertsen
Format: Others
Language:English
Published: Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk 2013
Online Access:http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-23254
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spelling ndltd-UPSALLA1-oai-DiVA.org-ntnu-232542013-10-27T04:46:45ZImplementing a Full-Band Monte Carlo Model for Zincblende Structure SemiconductorsengBergslid, Tore SivertsenNorges teknisk-naturvitenskapelige universitet, Institutt for fysikkInstitutt for fysikk2013During the work with this master's thesis a number of improvements have been made to the Monte Carlo program being developed at FFI. Algorithms for handling numerical band and scattering rate data have been constructed and integrated with the program. Of all the changes made in this work, most important is the fact that the program has been made capable of running with band structures and scattering rates calculated by the k*p-method, leaving the less accurate analytical approximations behind. The program is now capable of running bulk Monte Carlo simulations using a full-band model for the valence bands. All important infrastructure is also set up for adding full-band versions of other bands. Student thesisinfo:eu-repo/semantics/bachelorThesistexthttp://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-23254Local ntnudaim:8248application/pdfinfo:eu-repo/semantics/openAccess
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language English
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description During the work with this master's thesis a number of improvements have been made to the Monte Carlo program being developed at FFI. Algorithms for handling numerical band and scattering rate data have been constructed and integrated with the program. Of all the changes made in this work, most important is the fact that the program has been made capable of running with band structures and scattering rates calculated by the k*p-method, leaving the less accurate analytical approximations behind. The program is now capable of running bulk Monte Carlo simulations using a full-band model for the valence bands. All important infrastructure is also set up for adding full-band versions of other bands.
author Bergslid, Tore Sivertsen
spellingShingle Bergslid, Tore Sivertsen
Implementing a Full-Band Monte Carlo Model for Zincblende Structure Semiconductors
author_facet Bergslid, Tore Sivertsen
author_sort Bergslid, Tore Sivertsen
title Implementing a Full-Band Monte Carlo Model for Zincblende Structure Semiconductors
title_short Implementing a Full-Band Monte Carlo Model for Zincblende Structure Semiconductors
title_full Implementing a Full-Band Monte Carlo Model for Zincblende Structure Semiconductors
title_fullStr Implementing a Full-Band Monte Carlo Model for Zincblende Structure Semiconductors
title_full_unstemmed Implementing a Full-Band Monte Carlo Model for Zincblende Structure Semiconductors
title_sort implementing a full-band monte carlo model for zincblende structure semiconductors
publisher Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk
publishDate 2013
url http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-23254
work_keys_str_mv AT bergslidtoresivertsen implementingafullbandmontecarlomodelforzincblendestructuresemiconductors
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